DOPING AND DOPANT BEHAVIOR IN (AL,GA)AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：37

作者：

KUECH, TF

TISCHLER, MA

POTEMSKI, R

CARDONE, F

SCILLA, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(89)90197-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：174 / 187

页数：14

相关论文

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