INVESTIGATION OF ZINC INCORPORATION IN GAAS EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION

被引：22

作者：

CHANG, CY

CHEN, LP

WU, CH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1860 / 1863

页数：4

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[1] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE
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[2] INCORPORATION OF AL AND GA IN ALGAAS GROWN BY LOW-PRESSURE TRIETHYL GALLIUM METALORGANIC VAPOR-PHASE EPITAXY
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[4] GAALAS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD
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[6] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
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[7] MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE
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[8] REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 437 - 444
[9] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[10] EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L795 - L797