OPTIMUM DESIGN OF DELTA-DOPED INGAAS AVALANCHE PHOTODIODE BY USING QUASI-IONIZATION RATES

被引：13

作者：

ITO, M

MIKAWA, T

WADA, O

机构：

[1] Fujitsu Laboratories Ltd.

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1990年 / 8卷 / 07期

关键词：

19;

D O I：

10.1109/50.56405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new structure avalanche photodiode (APD) is designed by using quasi-ionization rates in InP and InGaAs. The structure has a δ-doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the δ-doped APD is analyzed by the Emmons's p-i-n electric field method. The highest GB product is expected to reach 160 GHz. © 1990 IEEE

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页码：1046 / 1050

页数：5

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