DETERMINATION BY RAMAN-SCATTERING OF THE IN-DEPTH DAMAGE PROFILE IN HIGH-ENERGY ION-IMPLANTATION

被引：7

作者：

ARES, R ^{[1
]}

TRUDEAU, YB ^{[1
]}

BREBNER, JL ^{[1
]}

KAJRYS, GE ^{[1
]}

JOUANNE, M ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75252 PARIS 05,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 90卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95585-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion implanted GaAs samples have been chemically etched to form a small angle beveled surface. First order Raman spectroscopy has been performed along the bevel of as-implanted samples bombarded with 2.3 MeV Be and 10.9 MeV Se ions. The phonon confinement interpretation [H. Richter et al., Solid State Commun. 39 (1981) 625] has been employed to fit the spectra and obtain the damage distributions. Comparisons with X-ray diffraction (XRD) and RBS-channeling (RBS) measurements show good agreement with regard to the basic shape and depth of the profiles. The Be-implanted sample shows a damaged layer at a depth of 2.5 to 4 mum while the Se implant shows a much wider damaged layer at a depth between 1 and 3.5 mum.

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页码：419 / 423

页数：5

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