TRANSPARENT CONDUCTIVE ZNO/AL FILMS PREPARED BY THE PLANAR MAGNETRON SPUTTERING SYSTEM WITH OBLIQUELY FACING TARGETS

Transparent conductive ZnO:Al films were prepared in Ar gas by planar magnetron sputtering with obliquely facing targets. The positional dependence of the film resistivity due to the film bombardment of energetic O atoms and O- ions was improved using the present sputtering system. However, the influence of the film bombardment by energetic Ar+ ions which were accelerated by the plasma potential and floating potential difference still remained on decreasing the carrier concentration. When the plasma confinement became stronger because of an increasing magnetic field. the carrier concentration was increased and a film resistivity of 4.5 x 10(-4) OMEGA cm was attained at a substrate temperature of 200-degrees-C.