FULLY ION-IMPLANTED INP JFET WITH BURIED P-LAYER

被引：11

作者：

KIM, SJ ^{[1
]}

JEONG, JC ^{[1
]}

VELLACOLEIRO, GP ^{[1
]}

SMITH, PR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A buried p-layer has been successfully implemented in a fully ion implanted InP JFET for the first time. Using Be co-implanted with Si, a sharp channel profile is obtained. The saturation current has been reduced and the pinch-off characteristic has been improved with a slight decrease in transconductance and cutoff frequency. The equivalent circuits for the JFET with and without the buried p-layer are compared. © 1990 IEEE

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页码：57 / 58

页数：2

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