EFFECTS OF ZN ELECTRICAL-ACTIVITY ON BAND-GAP ENERGY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

NISHIKAWA, Y

ISHIKAWA, M

TSUBURAI, Y

KOKUBUN, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2092 / L2094

页数：3

共 10 条

[1] DISORDERING OF THE ORDERED STRUCTURE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GA0.5IN0.5P ON (001) GAAS SUBSTRATES BY ZINC DIFFUSION [J].

DABKOWSKI, FP ;

GAVRILOVIC, P ;

MEEHAN, K ;

STUTIUS, W ;

WILLIAMS, JE ;

SHAHID, MA ;

MAHAJAN, S .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2142-2144

[2] DISORDERING OF THE ORDERED STRUCTURE IN MOCVD-GROWN GAINP AND ALGAINP BY IMPURITY DIFFUSION AND THERMAL ANNEALING [J].

GAVRILOVIC, P ;

DABKOWSKI, FP ;

MEEHAN, K ;

WILLIAMS, JE ;

STUTIUS, W ;

HSIEH, KC ;

HOLONYAK, N ;

SHAHID, MA ;

MAHAJAN, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :426-433

[3] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[4] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[5] ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

NISHIKAWA, Y ;

TSUBURAI, Y ;

NOZAKI, C ;

OHBA, Y ;

KOKUBUN, Y ;

KINOSHITA, H .

APPLIED PHYSICS LETTERS, 1988, 53 (22) :2182-2184

[6] GROWTH TEMPERATURE-DEPENDENT ATOMIC ARRANGEMENTS AND THEIR ROLE ON BAND-GAP OF INGAAIP ALLOYS GROWN BY MOCVD [J].

NOZAKI, C ;

OHBA, Y ;

SUGAWARA, H ;

YASUAMI, S ;

NAKANISI, T .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :406-411

[7] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].

OHBA, Y ;

ISHIKAWA, M ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :374-379

[8] HIGHLY RELIABLE INGAP INGAALP VISIBLE-LIGHT EMITTING INNER STRIPE LASERS WITH 667 NM LASING WAVELENGTH [J].

OKUDA, H ;

ISHIKAWA, M ;

SHIOZAWA, H ;

WATANABE, Y ;

ITAYA, K ;

NITTA, K ;

HATAKOSHI, GI ;

KOKUBUN, Y ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1477-1482

[9] BAND-GAP ENERGY ANOMALY AND SUBLATTICE ORDERING IN GAINP AND ALGAINP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SUZUKI, T ;

GOMYO, A ;

IIJIMA, S ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2098-2106

[10] P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SUZUKI, T ;

GOMYO, A ;

HINO, I ;

KOBAYASHI, K ;

KAWATA, S ;

IIJIMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1549-L1552

← 1 →