GEXSI1-X OPTICAL DIRECTIONAL COUPLER

被引:9
作者
MAYER, RA
JUNG, KH
HSIEH, TY
KWONG, DL
CAMPBELL, JC
机构
关键词
D O I
10.1063/1.104773
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated and characterized the first Ge(x)Si1-x optical directional couplers. These structures were fabricated from Ge(x)Si1-x grown by rapid thermal processing chemical vapor deposition. The average attenuation of single, straight waveguide sections was 3.3 dB/cm at a wavelength of 1.52-mu-m. For the directional couplers, the coupling coefficient was 3.9 cm-1 for a waveguide separation of 1.5-mu-m.
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页码:2744 / 2745
页数:2
相关论文
共 11 条
  • [1] CHARACTERISTICS OF TI-DIFFUSED LITHIUM-NIOBATE OPTICAL DIRECTIONAL-COUPLERS
    ALFERNESS, RC
    SCHMIDT, RV
    TURNER, EH
    [J]. APPLIED OPTICS, 1979, 18 (23) : 4012 - 4016
  • [2] AUSTIN MW, 1985, 3RD P EUR C INT OPT, P140
  • [3] LIMITED REACTION PROCESSING - SILICON EPITAXY
    GIBBONS, JF
    GRONET, CM
    WILLIAMS, KE
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723
  • [4] HIGH-QUALITY HOMOEPITAXIAL SILICON FILMS DEPOSITED BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION
    GREEN, ML
    BRASEN, D
    LUFTMAN, H
    KANNAN, VC
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2558 - 2560
  • [5] RELAXED GEXSI1-X FILMS GROWN BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION
    JUNG, KH
    KIM, YM
    KWONG, DL
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (18) : 1775 - 1777
  • [6] OPTICAL WAVE-GUIDES IN OXYGEN-IMPLANTED BURIED-OXIDE SILICON-ON-INSULATOR STRUCTURES
    KURDI, BN
    HALL, DG
    [J]. OPTICS LETTERS, 1988, 13 (02) : 175 - 177
  • [7] SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION
    LEE, SK
    KU, YH
    KWONG, DL
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1775 - 1777
  • [8] Optical channel waveguides in silicon diffused from GeSi alloy
    Schueppert, B.
    Schmidtchen, J.
    Petermann, K.
    [J]. ELECTRONICS LETTERS, 2009, : 27 - 28
  • [9] SOREF RA, 1989, SPIE P, V1177, P175
  • [10] LOW-LOSS OPTICAL RIDGE WAVE-GUIDES IN A STRAINED GESI EPITAXIAL LAYER GROWN ON SILICON
    SPLETT, A
    SCHMIDTCHEN, J
    SCHUPPERT, B
    PETERMANN, K
    KASPER, E
    KIBBEL, H
    [J]. ELECTRONICS LETTERS, 1990, 26 (14) : 1035 - 1037