HIGH-QUALITY HOMOEPITAXIAL SILICON FILMS DEPOSITED BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION

被引：37

作者：

GREEN, ML ^{[1
]}

BRASEN, D ^{[1
]}

LUFTMAN, H ^{[1
]}

KANNAN, VC ^{[1
]}

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2558 / 2560

页数：3

共 11 条

[1] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION [J].

BURGER, WR ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4255-4268

[2] APPLICATIONS OF RAPID THERMAL-PROCESSING TO SILICON EPITAXY [J].

BURNS, GP ;

WILKES, JG .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) :442-447

[3] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].

EVERSTEY.FC ;

PUT, BH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :106-110

[4] LIMITED REACTION PROCESSING - SILICON EPITAXY [J].

GIBBONS, JF ;

GRONET, CM ;

WILLIAMS, KE .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :721-723

[5] ATOMIC LAYER EPITAXY [J].

GOODMAN, CHL ;

PESSA, MV .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81

[6] THIN, HIGHLY DOPED LAYERS OF EPITAXIAL SILICON DEPOSITED BY LIMITED REACTION PROCESSING [J].

GRONET, CM ;

STURM, JC ;

WILLIAMS, KE ;

GIBBONS, JF ;

WILSON, SD .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :1012-1014

[7]

GRONET CM, 1986, MATERIALS RES SOC S, V71, P107

[8]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[9] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

SMITH, DA ;

NGUYEN, TN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1232-1235

[10] LIMITED REACTION PROCESSING - GROWTH OF III-V EPITAXIAL LAYERS BY RAPID THERMAL METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

REYNOLDS, S ;

VOOK, DW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1720-1722

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