ELECTRONIC AND STRUCTURAL-PROPERTIES OF STEPS ON CLEAVED SEMICONDUCTOR SURFACES

被引:21
作者
KRUEGER, S
MONCH, W
机构
关键词
D O I
10.1016/0039-6028(80)90585-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:157 / 164
页数:8
相关论文
共 35 条
  • [21] SITE OF OXYGEN-CHEMISORPTION ON GAAS(110) SURFACE
    MELE, EJ
    JOANNOPOULOS, JD
    [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (05) : 341 - 344
  • [22] PHYSICS OF RECONSTRUCTED SILICON SURFACES
    MONCH, W
    [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 672 - 699
  • [23] PHOTOEMISSION AND BAND-STRUCTURE STUDIES OF GAAS(110) SURFACE
    PANDEY, KC
    FREEOUF, JL
    EASTMAN, DE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 904 - 909
  • [24] ENERGY-BANDS OF RECONSTRUCTED SURFACE STATES OF CLEAVED SI
    PANDEY, KC
    PHILLIPS, JC
    [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1450 - 1453
  • [25] ELECTRONIC-STRUCTURE OF A STEPPED SILICON SURFACE
    RAJAN, VT
    FALICOV, LM
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (13): : 2533 - 2540
  • [26] PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON
    ROWE, JE
    CHRISTMAN, SB
    IBACH, H
    [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (14) : 874 - 877
  • [27] Runyan W.R., 1965, SILICON SEMICONDUCTO
  • [28] STEP-DEPENDENT SURFACE-STATES ON SILICON (111)
    SCHLUTER, M
    HO, KM
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 550 - 555
  • [29] Anisotropy of the electronic work function of metals
    Smoluchowski, R
    [J]. PHYSICAL REVIEW, 1941, 60 (09): : 661 - 674
  • [30] SNYDER LC, 1978, SURFACE SCI, V71, P404