SUBMICROMETER N+-GE GATE ALGAAS/GAAS MISFETS

被引：6

作者：

HIRANO, M

FUJITA, S

MAEZAWA, K

MIZUTANI, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2217 / 2222

页数：6

共 14 条

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[2]

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[3]

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[4] SMALL-SIGNAL CHARACTERISTICS OF N+-GE GATE ALGAAS/GAAS MISFETS [J].

FUJITA, S ;

HIRANO, M ;

MIZUTANI, T .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :518-520

[5] A HIGH-SPEED FREQUENCY-DIVIDER USING N+-GE GATE ALGAAS/GAAS MISFETS [J].

FUJITA, S ;

HIRANO, M ;

MAEZAWA, K ;

MIZUTANI, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :226-227

[6]

Fujita S., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P288

[7]

FUJITA S, 1987, IEEE T ELECTRON SEP, V34

[8] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J].

KATAYAMA, Y ;

MORIOKA, M ;

SAWADA, Y ;

UEYANAGI, K ;

MISHIMA, T ;

ONO, Y ;

USAGAWA, T ;

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[9]

MAEZAWA K, 1986, 18TH INT C SOL STAT, P367

[10] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J].

MATSUMOTO, K ;

OGURA, M ;

WADA, T ;

HASHIZUME, N ;

YAO, T ;

HAYASHI, Y .

ELECTRONICS LETTERS, 1984, 20 (11) :462-463

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