MICRO MICROCAVITY METHOD APPLIED TO THE STUDY OF THE STEP COVERAGE FORMATION MECHANISM OF SIO2-FILMS BY LPCVD

被引：67

作者：

WATANABE, K

KOMIYAMA, H

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, University of Tokyo, Tokyo 113, Hongo, Bunkyo-ku

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 04期

关键词：

D O I：

10.1149/1.2086636

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The step coverage of submicron trenches by silica films formed by low-pressure chemical vapor deposition is studied, using a novel approach called the “micro/macrocavity method” that analyzes simultaneously the growth rate profiles at millimeter and submicron scales. A mechanism is strongly indicated in which the step coverage quality is governed by the diffusion rate and sticking coefficient of only one reaction intermediate, produced from silane and oxygen in the gas phase. The step coverage is experimentally correlated with temperature, shape, and size of the trench, and is reasonably interpreted by the mechanism proposed. An approximation method for quick estimation of the step coverage is proposed. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1222 / 1227

页数：6

共 26 条

[11] THE KINETICS OF SILICON DIOXIDE CHEMICAL VAPOR-DEPOSITION .1. SURFACE CHEMICAL-REACTIONS [J].

GRABIEC, PB ;

PRZYLUSKI, J .

SURFACE TECHNOLOGY, 1985, 25 (04) :307-313

[12]

Graham J., 1974, High Temperatures - High Pressures, V6, P577

[13] STOICHIOMETRY AND POSSIBLE MECHANISM OF SIH4-O2 EXPLOSIONS [J].

HARTMAN, JR ;

FAMILGHIRIHA, J ;

RING, MA ;

ONEAL, HE .

COMBUSTION AND FLAME, 1987, 68 (01) :43-56

[14]

IKEGAWA M, 1988, P 7 S PLASM PROC, P378

[15]

JACHIMOWSKI CJ, 1983, NASA2129 TECHN PAP

[16] CHEMICAL VAPOR-DEPOSITION OF SILICON FILMS IN CAPILLARY LAYERS [J].

JANAI, M .

THIN SOLID FILMS, 1982, 91 (03) :211-216

[17]

KODA S, 1987, 8TH P INT S PLASM CH, P2022

[18] THE STEP COVERAGE OF UNDOPED AND PHOSPHORUS-DOPED SIO2 GLASS-FILMS [J].

LEVIN, RM ;

EVANSLUTTERODT, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :54-61

[19] DEPOSITION KINETICS OF SIO2 FILM [J].

MAEDA, M ;

NAKAMURA, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6651-6654

[20] PLASMA-DEPOSITED THIN-FILM STEP COVERAGE CALCULATED BY COMPUTER-SIMULATION [J].

ROSS, RC ;

VOSSEN, JL .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :239-240

← 1 2 3 →