CHARACTERISTICS OF THE SI-SIO2 INTERFACE STATES IN THIN (70-230 A) OXIDE STRUCTURES

被引：54

作者：

KAR, S ^{[1
]}

NARASIMHAN, RL ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,ADV CTR MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.338273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5353 / 5359

页数：7

相关论文

共 23 条

[1] THEORY OF THE OXIDATION OF METALS
CABRERA, N
MOTT, NF
[J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184
[2] SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES
CARD, HC
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 809 - 817
[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[5] FREQUENCY-RESPONSE OF SI-SIO2 INTERFACE STATES ON THIN OXIDE MOS CAPACITORS
EATON, DH
SAH, CT
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 95 - +
[6] COMPLETE EXPLORATION OF THE SILICON GAP AT THE SI-SIO2 INTERFACE OF MIS TUNNEL-DIODES USING THE CONDUCTANCE TECHNIQUE AT VARIOUS TEMPERATURES AND ILLUMINATION LEVELS
ELSAYED, M
PANANAKAKIS, G
KAMARINOS, G
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 345 - 357
[7] LOW-TEMPERATURE OXIDATION OF METALS AND SEMICONDUCTORS
FEHLNER, FP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) : 1645 - 1652
[8] Fonash S.J., 1981, SOLAR CELL DEVICE PH
[9] THIN-OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES
HUNTER, WR
EATON, DH
SAH, CT
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (05) : 211 - &
[10] JOHNSON NM, 1980, P INT TOPICAL C PHYS, P331