TITANIUM-RELATED DEEP LEVELS IN SILICON - A REEXAMINATION

被引：38

作者：

MATHIOT, D

HOCINE, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.343608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5862 / 5867

页数：6

共 21 条

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