共 28 条
[11]
ELECTRICAL EFFECTS OF DISLOCATIONS IN GALLIUM-ARSENIDE
[J].
JOURNAL DE PHYSIQUE,
1979, 40
:75-79
[12]
MECHANISM FOR THE EFFECT OF DOPING ON DISLOCATION MOBILITY
[J].
JOURNAL DE PHYSIQUE,
1979, 40
:117-121
[13]
RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS
[J].
JOURNAL DE PHYSIQUE,
1979, 40
:27-32
[15]
THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1980, 42 (02)
:213-219
[16]
THEORETICAL CALCULATIONS OF ELECTRON-STATES ASSOCIATED WITH DISLOCATIONS
[J].
JOURNAL DE PHYSIQUE,
1979, 40
:33-38
[17]
DISLOCATION STATES IN GALLIUM-ARSENIDE
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1979, 39 (01)
:21-25
[18]
LOWTHER JE, 1977, PHYS REV B, V15, P3928, DOI 10.1103/PhysRevB.15.3928
[19]
ON THE CORE STRUCTURE OF THE GLIDE-SET 9-DEGREES AND 3-DEGREES PARTIAL DISLOCATIONS IN SILICON
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1980, 100 (01)
:77-85
[20]
ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60-DEGREES-DISLOCATION IN SILICON AND GERMANIUM
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1978, 85 (02)
:673-681