CHARACTERIZATION OF HIGH-QUALITY INGAP/GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：3

作者：

CALDIRONI, M ^{[1
]}

VITALI, L ^{[1
]}

DELLAGIOVANNA, M ^{[1
]}

DIPAOLA, A ^{[1
]}

VIDIMARI, F ^{[1
]}

PELLEGRINO, S ^{[1
]}

FERRARI, C ^{[1
]}

FRANZOSI, P ^{[1
]}

机构：

[1] CNR,INST MASPEC,I-43100 PARMA,ITALY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

GALLIUM ARSENIDE; MOCVD; EPITAXY OF THIN FILMS; SEMICONDUCTORS;

D O I：

10.1016/0921-5107(94)90038-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thermodynamic approach to the epitaxial deposition of InGaAsP alloys onto GaAs substrates was reviewed, and good agreement was found with experiments when neglecting the 2V(2)=V-4 (V=As, P) vapour phase reaction. InGaAsP and its ternary limit InGaP were grown at different temperatures, substrate misorientation and V-m ratios. X-ray diffraction techniques and photoluminescence were employed to assess the quality of the materials grown.

引用

页码：158 / 163

页数：6

共 17 条

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