GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAXIN1-XASYP1-Y LATTICE-MATCHED TO GAAS

被引：9

作者：

ZHANG, G

机构：

[1] Department of Physics, Tampere University of Technology, SF-33101 Tampere

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.109802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gas-source molecular beam epitaxy growth of GaxIn1-xAsP1-y layers lattice matched to GaAs is reported. X-ray diffraction, photoluminescence, and Hall measurements show that the layers are of good quality. High-quality GaAs/GaxIn1-xAsyP1-y heterojunction and (In)GaAs/GaxIn1-xAsyP1-y quantum well structures have also been prepared, as deduced from the device characteristics of heterojunction diodes and quantum well lasers.

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页码：1128 / 1130

页数：3

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