DENSITY OF ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY

被引：15

作者：

OIKKONEN, M ^{[1
]}

TUOMI, T ^{[1
]}

LUOMAJARVI, M ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT PHYS,SF-00170 HELSINKI,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1070 / 1074

页数：5

相关论文

共 19 条

[1] Chu W.-K., 1978, Backscattering Spectrometry
[2] ATOMIC LAYER EPITAXY
GOODMAN, CHL
PESSA, MV
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : R65 - R81
[3] PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES
HURD, JM
KING, CN
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (06) : 879 - 891
[4] OPTICAL-PROPERTIES OF ZINC-SULFIDE THIN-FILMS PREPARED BY SUBLIMATION IN ULTRAHIGH-VACUUM AND BY RF SPUTTERING IN ARGON
JONES, PL
COTTON, DR
MOORE, D
[J]. THIN SOLID FILMS, 1982, 88 (02) : 163 - 175
[5] EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZNS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY
LAHTINEN, JA
LU, A
TUOMI, T
TAMMENMAA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1851 - 1853
[6] X-RAY-DIFFRACTION STUDY OF MICROSTRUCTURE IN ZNS THIN-FILMS GROWN FROM ZINC ACETATE BY ATOMIC LAYER EPITAXY
OIKKONEN, M
BLOMBERG, M
TUOMI, T
TAMMENMAA, M
[J]. THIN SOLID FILMS, 1985, 124 (3-4) : 317 - 321
[7] ELLIPSOMETRIC STUDIES ON ZINC-SULFIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY
OIKKONEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1385 - 1393
[8] OIKKONEN M, IN PRESS MATER RES B
[9] PREISINGER A, 1974, JPN J APPL PHYS S, V2, P769
[10] COMPUTER-ANALYSIS OF ION ELASTIC BACKSCATTERING - AN ITERATIVE FITTING METHOD
RAUHALA, E
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) : 3324 - 3327