INVESTIGATION OF EPITAXIAL SILICON LAYERS GROWN IN PRESENCE OF SMALL QUANTITIES OF GOLD

被引：8

作者：

FILBY, JD

NIELSEN, S

RICH, GJ

BOOKER, GR

LARCHER, JM

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1967年 / 16卷 / 141期

关键词：

D O I：

10.1080/14786436708220865

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：565 / &

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[1] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES
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[4] EPITAXIAL DEPOSITION OF SILICON USING ULTRA-THIN ALLOY ZONE CRYSTALLISATION
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[7] Thin Alloy Zone Crystallisation
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[8] THIN ALLOY ZONE CRYSTALLIZATION - CONSTITUTIONAL SUPERCOOLING IN MOVING ALLOY ZONES
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[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (07) : 201 - 203
[9] THE USE OF A METASTABLE PHASE IN THIN ALLOY ZONE CRYSTALLIZATION
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[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (07) : 197 - 199
[10] SILICON WHISKER GROWTH AND EPITAXY BY VAPOUR-LIQUID-SOLID MECHANISM
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[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1965, 16 (08): : 1089 - &