TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+ IMPLANTED SI ON SUBSEQUENT LASER ANNEALING

被引：5

作者：

SADANA, DK ^{[1
]}

STRATHMAN, M ^{[1
]}

WASHBURN, J ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET,OXFORD,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 747

页数：4

共 14 条

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[8] TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED SI [J].

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[9] REGROWTH BEHAVIOR OF 3 DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED SI [J].

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[10] ELECTRON-MICROSCOPE STUDIES OF ION-IMPLANTED SILICON AND GALLIUM-ARSENIDE AFTER LASER AND FURNACE ANNEALING [J].

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BOOKER, GR .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :51-59

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