11.5GHZ MODULATION BANDWIDTH PARA-SUBSTRATE GAINASP BURIED CRESCENT LASER WITH HIGH OUTPUT POWER

被引：1

作者：

NG, W

CRAIG, R

YEN, HW

机构：

[1] Hughes Research Lab, Malibu, CA, USA, Hughes Research Lab, Malibu, CA, USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 01期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Microwaves;

D O I：

10.1049/el:19880030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low threshold (I//t//h approximately equals 20 ma) 1. 3 mu m GaInAsP p-substrate buried cresent lasers with output powers in excess of 30 mw/facet have been modulated into the X-band at 24 degree C. The chip capacitance deduced from scattering parameter (S//1//1) measurements was as low as 3 pf. A 3 db direct modulation bandwidth of approximately 11. 5 GHz has been observed at a bias current equal to 5I//t//h.

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页码：43 / 45

页数：3

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