EFFECTS OF DOPING PROFILE ON CONVERSION EFFICIENCY OF A GUNN DIODE

被引：11

作者：

HASEGAWA, F

SUGA, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 01期

关键词：

D O I：

10.1109/T-ED.1972.17367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：26 / &

共 25 条

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[9] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].

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[10] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J].

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