INFRARED ELLIPSOMETRY STUDY OF THE VIBRATIONAL PROPERTIES OF GROWING MICROCRYSTALLINE SILICON THIN-FILMS

被引:9
作者
BLAYO, N
DREVILLON, B
机构
[1] Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS), Ecole Polytechnique
关键词
D O I
10.1016/S0022-3093(05)80235-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The early stage of the growth of plasma deposited microcrystalline silicon (mu-c-Si) thin films on glass substrate is investigated by in situ infrared phase modulated ellipsometry (IRPME) in the silicon-hydrogen stretching mode region. Two deposition methods are used: by highly diluting SiH4 in H-2, or by alternating SiH4 and H-2 discharges. Analysis of the spectra provides a precise description of the film evolution. mu-c-Si films are found to grow very inhomogeneously. The effect of hydrogen plasma exposure toward microcrystallization is discussed.
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收藏
页码:775 / 778
页数:4
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