STRUCTURE AND ELECTRONIC-PROPERTIES OF EPITAXIALLY GROWN SILICIDES

被引：8

作者：

DERRIEN, J

CHEVRIER, J

YOUNSI, A

LETHANH, V

DUSSAULCY, JP

CHERIEF, N

机构：

[1] UNIV AIX MARSEILLE 3,F-13628 AIX EN PROVENCE,FRANCE

[2] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

PHYSICA SCRIPTA | 1991年 / T35卷

关键词：

D O I：

10.1088/0031-8949/1991/T35/051

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Heteroepitaxy of metallic and semiconducting silicides on silicon will be reviewed in this communication. The structure and the physical properties of ultra thin silicide films, epitaxially grown on silicon substrates under ultra high vacuum conditions, will be discussed in the light of results obtained with a large variety of in situ and ex situ surface techniques. Special attention will be paid to the growth of semiconducting silicides in order to elaborate heterostructures with only silicon and its related compounds.

引用

页码：251 / 260

页数：10

共 46 条

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