ARSENIC DOPING OF CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON USING SIH4-H2-ASH3 GAS SYSTEM

被引：9

作者：

MUROTA, J ^{[1
]}

ARAI, E ^{[1
]}

KUDO, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,IBARAKI ELECT COMMUN LABS,TOKAI,IBARAKI 31911,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 05期

关键词：

D O I：

10.1149/1.2129845

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1188 / 1192

页数：5

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