PULSED ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON

被引：11

作者：

YAMAMOTO, Y ^{[1
]}

INADA, T ^{[1
]}

SUGIYAMA, T ^{[1
]}

TAMURA, S ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：276 / 283

页数：8

共 13 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2] CW INFRARED-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

CELLER, GK ;

POATE, JM ;

ROZGONYI, GA ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7264-7266

[3]

Chu WK., 1978, BACKSCATTERING SPECT

[4] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[5] USE OF A SCANNING CW KR LASER TO OBTAIN DIFFUSION-FREE ANNEALING OF B-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

WILLIAMS, P ;

DELINE, V ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :389-391

[6] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[7] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J].

LIETOILA, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :532-534

[8] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J].

LIETOILA, A ;

GIBBONS, JF ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :765-768

[9] FURNACE ANNEALING BEHAVIOR OF PHOSPHORUS IMPLANTED, LASER ANNEALED SILICON [J].

MIYAO, M ;

ITOH, K ;

TAMURA, M ;

TAMURA, H ;

TOKUYAMA, T .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4139-4144

[10]

MULLER H, 1978, APPL PHYS LETT, V26, P292

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