LIMITS OF APPLICABILITY OF THE DEPLETION APPROXIMATION AND ITS RECENT AUGMENTATION

被引：3

作者：

BARTELINK, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.92404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：461 / 463

页数：3

共 10 条

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[3]

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[8] DEPLETION APPROXIMATION ANALYSIS OF THE DIFFERENTIAL CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN MOS STRUCTURE WITH NONUNIFORMLY DOPED SEMICONDUCTORS [J].

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[9] AN IMPROVED DEFINITION FOR THE ONSET OF HEAVY INVERSION IN AN MOS STRUCTURE WITH NONUNIFORMLY DOPED SEMICONDUCTORS [J].

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[10] LIMITATIONS OF CV TECHNIQUE FOR ION-IMPLANTED PROFILES [J].

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