BROKEN SYMMETRY STATES IN N-TYPE SILICON INVERSION LAYERS

被引：6

作者：

KELLY, MJ

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 20期

关键词：

D O I：

10.1088/0022-3719/11/20/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4239 / 4250

页数：12

共 14 条

[1] POSSIBILITY OF A SPIN-DENSITY-WAVE OR A VALLEY DENSITY-WAVE IN GROUND-STATE OF A 2-DIMENSIONAL ELECTRON FLUID [J].

BERGMAN, DJ ;

RICE, TM .

SOLID STATE COMMUNICATIONS, 1977, 23 (01) :59-62

[2] SUPERCONDUCTIVITY IN MANY-VALLEY SEMICONDUCTORS + IN SEMIMETALS [J].

COHEN, ML .

PHYSICAL REVIEW, 1964, 134 (2A) :A511-+

[3] VALLEY DEGENERACY AND MOBILITY ANISOTROPY UNDER MECHANICAL-STRESS ON (111) SILICON INVERSION LAYERS [J].

DORDA, G ;

GESCH, H ;

EISELE, I .

SOLID STATE COMMUNICATIONS, 1976, 20 (04) :429-432

[4] EXCHANGE INSTABILITIES IN AN NORMAL-TYPE SILICON INVESION LAYER [J].

KALIA, RK ;

QUINN, JJ .

PHYSICAL REVIEW B, 1978, 17 (03) :1383-1387

[5] ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW B, 1977, 15 (04) :1974-1982

[6] DEPENDENCE OF ELECTRONIC GROUND-STATE OF NORMAL TYPE SILICON INVERSION LAYERS ON STRESS, TEMPERATURE, MAGNETIC-FIELD AND GATE VOLTAGE [J].

KELLY, MJ ;

FALICOV, LM .

SURFACE SCIENCE, 1978, 73 (01) :303-314

[7] OPTICAL-PROPERTIES OF CHARGE-DENSITY-WAVE GROUND-STATES FOR INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW B, 1977, 15 (04) :1983-1987

[8] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW LETTERS, 1976, 37 (15) :1021-1024

[9] STRESS AND TEMPERATURE-DEPENDENCE OF ELECTRONIC PROPERTIES OF N-TYPE SILICON INVERSION LAYERS [J].

KELLY, MJ ;

FALICOV, LM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4735-4752

[10] SHUBNIKOV HAAS OSCILLATIONS IN N-TYPE INVERSION LAYERS ON (110) AND (111) SURFACES OF SI [J].

LAKHANI, AA ;

STILES, PJ .

PHYSICS LETTERS A, 1975, A 51 (02) :117-118

← 1 2 →