SELECTIVE ETCHING OF SIGE ON SIGE/SI HETEROSTRUCTURES

被引：28

作者：

CHANG, GK

CARNS, TK

RHEE, SS

WANG, KL

机构：

[1] Department of Electronic Engineering, Dankook University

[2] Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 01期

关键词：

D O I：

10.1149/1.2085539

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H2O2:CH3COOH) is studied as a selective etchant of SiGe over Si. It is found that the solution has a very high selectivity of etching SiGe over Si. Etch rates for various Ge(x)Si1-x samples with differing mole fractions of Ge (0.15 less-than-or-equal-to x less-than-or-equal-to 0.40) are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.

引用

页码：202 / 204

页数：3

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