EFFECTS OF IMPLANTATION AND ANNEALING ON THE RAMAN-SPECTRUM OF INP AND GAAS

被引：27

作者：

ABELS, LL ^{[1
]}

SUNDARAM, S ^{[1
]}

SCHMIDT, RL ^{[1
]}

COMAS, J ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED SURFACE SCIENCE | 1981年 / 9卷 / 1-4期

关键词：

D O I：

10.1016/0378-5963(81)90021-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：2 / 13

页数：12

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