HOT-ELECTRON MAGNETORESISTANCE IN N-SILICON INVERSION LAYERS

被引：6

作者：

HESS, K

机构：

[1] UNIV VIENNA,LUDWIG BOLTZMANN INST FESTKORPERPHYS,VIENNA,AUSTRIA

[2] UNIV VIENNA,INST ANGEW PHYS,VIENNA,AUSTRIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 31卷 / 02期

关键词：

D O I：

10.1002/pssa.2210310218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：483 / 487

页数：5

相关论文

共 14 条

[1] LOW-TEMPERATURE NON-OHMIC GALVANOMAGNETIC EFFECTS IN DEGENERATE N-TYPE INAS
BAUER, G
KAHLERT, H
[J]. PHYSICAL REVIEW B, 1972, 5 (02): : 566 - &
[2] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215
[3] EDWARDS JR, 1969, THESIS U ILLINOIS
[4] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +
[5] NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES
HESS, K
NEUGROSCHEL, A
SHIUE, CC
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1721 - 1727
[6] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS
HESS, K
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257
[7] HOT-ELECTRON MAGNETORESISTANCE IN N-SILICON INVERSION LAYERS
HESS, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02): : 483 - 487
[8] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS
HESS, K
SAH, CT
[J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3375 - 3386
[9] LANDWEHR G, 1975, FESTKORPERPROBLEME, V15, P49
[10] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE
SAH, CT
TSCHOPP, LL
NING, TH
[J]. SURFACE SCIENCE, 1972, 32 (03) : 561 - &