LOW-TEMPERATURE HETEROEPITAXIAL GROWTH OF SI ON SAPPHIRE BY DISILANE GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引:7
作者
SAWADA, K [1 ]
ISHIDA, M [1 ]
HAYAMA, K [1 ]
NAKAMURA, T [1 ]
SUZAKI, T [1 ]
机构
[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
关键词
D O I
10.1016/0022-0248(89)90557-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:587 / 590
页数:4
相关论文
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