SURFACE SEGREGATION AT METAL-III-V-COMPOUND-SEMICONDUCTOR INTERFACES

被引:46
作者
LIN, ZD
XU, F
WEAVER, JH
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 11期
关键词
D O I
10.1103/PhysRevB.36.5777
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5777 / 5783
页数:7
相关论文
共 81 条
[31]   SOFT-X-RAY PHOTOEMISSION-STUDY OF CO-N-TYPE INP(110) INTERFACE [J].
KENDELEWICZ, T ;
LIST, RS ;
WILLIAMS, MD ;
BERTNESS, KA ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1986, 34 (02) :558-562
[32]   SYSTEMATICS OF INTERFACIAL CHEMICAL-REACTIONS ON INP(110) [J].
KENDELEWICZ, T ;
PETRO, WG ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :453-458
[33]   PHOTOEMISSION-STUDY OF THE REACTIVE PD/INP(110) INTERFACE [J].
KENDELEWICZ, T ;
LIST, RS ;
BERTNESS, KA ;
WILLIAMS, MD ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :959-965
[34]  
KENDELEWICZ T, 1983, PHYS REV B, V27, P3366, DOI 10.1103/PhysRevB.27.3366
[35]   INTERACTION OF AL OVERLAYERS WITH THE INP(110) SURFACE [J].
KENDELEWICZ, T ;
PETRO, WG ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1984, 30 (10) :5800-5810
[36]   THE REACTIVE CR/INP AND MN/INP INTERFACES [J].
LIST, RS ;
KENDELEWICZ, T ;
WILLIAMS, MD ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1002-1006
[37]   ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES [J].
LUDEKE, R ;
LANDGREN, G .
PHYSICAL REVIEW B, 1986, 33 (08) :5526-5535
[38]   INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J].
LUDEKE, R ;
LANDGREN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :667-673
[39]   SILVER CONTACT ON GAAS (001) AND INP (001) [J].
MASSIES, J ;
DEVOLDERE, P ;
LINH, NT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1353-1357
[40]   THE GROWTH OF SILVER ON GAAS[001] - EPITAXIAL RELATIONSHIPS, MODE OF GROWTH AND INTERFACIAL DIFFUSION [J].
MASSIES, J ;
DELESCLUSE, P ;
ETIENNE, P ;
LINH, NT .
THIN SOLID FILMS, 1982, 90 (01) :113-118