INCORPORATION OF NITROGEN IN ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：14

作者：

HOFFMANN, A ^{[1
]}

HEITZ, R ^{[1
]}

LUMMER, B ^{[1
]}

FRICKE, C ^{[1
]}

KUTZER, V ^{[1
]}

BROSER, I ^{[1
]}

TAUDT, W ^{[1
]}

GLEITSMANN, G ^{[1
]}

HEUKEN, M ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-52056 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90837-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The incorporation processes and efficiencies of nitrogen doping for p-type conductivity in metalorganic vapour phase epitaxy (MOVPE) grown ZnSe/GaAs epilayers are investigated by means of time-integrated and time-resolved photoluminescence (PL) spectroscopy. Two nitrogen-doping methods are compared, plasma-enhanced doping during growth, and ion implantation of nitrogen with annealing after growth. Both types of doped layers exhibit the I1N transition from a neutral acceptor bound exciton complex (A(N)0, X), indicating an effective nitrogen embedding on selenium sites. With increasing nitrogen doping rates, a deeper bound exciton line I1C appears, lowering the intensity of the I1N. An observed reduction of the I1N and I1C lifetimes for higher nitrogen doping concentrations results from an enhanced overlap of the bound exciton wave functions with those of other impurity centres.

引用

页码：379 / 384

页数：6

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