X-RAY ABSORPTION-SPECTROSCOPY UNDER CONDITIONS OF TOTAL EXTERNAL REFLECTION - APPLICATION TO THE STRUCTURAL CHARACTERIZATION OF THE CU/GAAS(100) INTERFACE

被引：4

作者：

PIZZINI, S

ROBERTS, KJ

GREAVES, GN

BARRETT, NT

DRING, I

OLDMAN, RJ

机构：

[1] SERC, DARESBURY LAB, WARRINGTON WA4 4AD, CHESHIRE, ENGLAND

[2] CTR UNIV ORSAY, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE

[3] ICI CHEM & POLYMERS PLC, RUNCORN WA7 4QE, ENGLAND

来源：

FARADAY DISCUSSIONS | 1990年 / 89卷

关键词：

D O I：

10.1039/dc9908900051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：51 / +

共 27 条

[11] GLANCING-ANGLE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE AND REFLECTIVITY STUDIES OF INTERFACIAL REGIONS [J].

HEALD, SM ;

CHEN, H ;

TRANQUADA, JM .

PHYSICAL REVIEW B, 1988, 38 (02) :1016-1026

[12]

JAMES RW, 1969, CRYSTALLINE STATE, V2

[13] INTERFACIAL CHEMICAL-REACTIVITY OF METAL CONTACTS WITH THIN NATIVE OXIDES OF GAAS [J].

KOWALCZYK, SP ;

WALDROP, JR ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :611-616

[14] THE FORMATION OF SURFACE ARSENIC OXIDE CRYSTALS ON GAAS [J].

LAU, WM ;

CHAN, TC ;

BULT, RP .

MATERIALS LETTERS, 1987, 5 (03) :88-93

[15] ELECTRONIC-PROPERTIES OF METAL-III-V SEMICONDUCTOR INTERFACES [J].

LINDAU, I ;

KENDELEWICZ, T ;

NEWMAN, N ;

LIST, RS ;

WILLIAMS, MD ;

SPICER, WE .

SURFACE SCIENCE, 1985, 162 (1-3) :591-604

[16] EXAFS STUDIES ON SUPERFICIAL REGIONS BY MEANS OF TOTAL REFLECTION [J].

MARTENS, G ;

RABE, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02) :415-424

[17] SCHOTTKY CONTACTS TO CLEAVED GAAS (110) SURFACES .2. THERMODYNAMIC ASPECTS [J].

MCGILP, JF ;

MCLEAN, AB .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (04) :807-818

[18] SCHOTTKY-BARRIER FORMATION AND INTERMIXING OF NOBLE-METALS ON GAAS(110) [J].

PAN, SH ;

MO, D ;

PETRO, WG ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :593-597

[19] SURFACE STUDIES OF SOLIDS BY TOTAL REFLECTION OF X-RAYS [J].

PARRATT, LG .

PHYSICAL REVIEW, 1954, 95 (02) :359-369

[20] HIGH SCHOTTKY BARRIERS ON AND THERMALLY INDUCED PROCESSES AT THE AU-GAAS(110) INTERFACE [J].

PETRO, WG ;

BABALOLA, IA ;

SKEATH, P ;

SU, CY ;

HINO, I ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :585-589

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