SEMI-INSULATING COBALT DOPED INDIUM-PHOSPHIDE GROWN BY MOCVD

被引：9

作者：

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

CHENG, WH ^{[1
]}

POOLADDEJ, J ^{[1
]}

BUEHRING, KD ^{[1
]}

WOLF, DL ^{[1
]}

机构：

[1] ROCKWELL INT CORP,DIV LIGHTWARE SYST,DALLAS,TX 75207

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Indium Phosphide - Metalorganic Chemical Vapor Deposition;

D O I：

10.1016/0022-0248(88)90586-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：576 / 582

页数：7

共 21 条

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