UNIAXIAL-STRESS STUDY OF PHOTOLUMINESCENCE DEFECTS CREATED BY NOBLE-GAS IMPLANTATION INTO SILICON

被引：14

作者：

BURGER, N

IRION, E

TESCHNER, A

THONKE, K

SAUER, R

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.3804

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3804 / 3809

页数：6

共 17 条

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BURGER, N ;

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[8] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-) [J].

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[9] EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS [J].

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