APPLICABILITY OF MULTIPLE ANGLE OF INCIDENCE ELLIPSOMETRY (MAI) - MEASUREMENTS TO GAAS ANODIC OXIDE AND GAP ANODIC OXIDE SYSTEMS AT WAVELENGTH 632.8 NM

被引：9

作者：

LOSCHKE, K ^{[1
]}

BAUMGARTEN, J ^{[1
]}

机构：

[1] VEB LEITZENTRUM ANWENDUNGSFORSCH,DDR-703 LEIPZIG,GER DEM REP

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1978年 / 13卷 / 10期

关键词：

D O I：

10.1002/crat.19780131017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1235 / 1245

页数：11

共 10 条

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[3] EFFECT OF THIN SURFACE FILM ON ELLIPSOMETRIC DETERMINATION OF OPTICAL CONSTANTS [J].

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[6] ELLIPSOMETRIC LIQUID IMMERSION METHOD FOR DETERMINATION OF ALL OPTICAL PARAMETERS OF SYSTEM - NONABSORBING FILM ON AN ABSORBING SUBSTRATE [J].

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KNAUSENB.WH ;

VEDAM, K .

SURFACE SCIENCE, 1969, 16 :112-&

[7]

MCCRACKIN FL, 1964, NBS256 MISC PUBL, P61

[8] DEFINITIONS AND CONVENTIONS IN ELLIPSOMETRY [J].

MULLER, RH .

SURFACE SCIENCE, 1969, 16 :14-&

[9] ELLIPSOMETRIC STUDIES OF POLISHED SILICON SURFACES [J].

OHLIDAL, M ;

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LUKES, F .

SURFACE SCIENCE, 1976, 55 (02) :467-476

[10] ERROR ANALYSIS OF ANGLE OF INCIDENCE MEASUREMENTS [J].

SCHUELER, DG .

SURFACE SCIENCE, 1969, 16 :104-&

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