DEPTH PROFILING BY SECONDARY ION MASS-SPECTROMETRY

被引：70

作者：

ZINNER, E ^{[1
]}

机构：

[1] WASHINGTON UNIV,DEPT PHYS,ST LOUIS,MO 63130

来源：

SCANNING | 1980年 / 3卷 / 02期

关键词：

D O I：

10.1002/sca.4950030202

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：57 / 78

页数：22

共 238 条

[71] FORMALISM FOR EXTRACTING DIFFUSION-COEFFICIENTS FROM CONCENTRATION PROFILES [J].

HALL, PM ;

MORABITO, JM .

SURFACE SCIENCE, 1976, 54 (01) :79-90

[72] SPOT PATTERNS AND SILSBEE CHAINS ON A CU SINGLE CRYSTAL - (COMPUTER SIMULATION AR+ T) [J].

HARRISON, DE ;

JOHNSON, JP ;

LEVY, NS .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :33-&

[73]

HERION J, 1978, JUL1483 KERN FORSCH

[74] CONCENTRATION PROFILES OF PROJECTILES AND RECOILED NITROGEN IN SI AFTER ION-IMPLANTATION THROUGH SI3N4 FILMS [J].

HIRAO, T ;

INOUE, K ;

TAKAYANAGI, S ;

YAEGASHI, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :193-201

[75] DEPTH DISTRIBUTION OF KNOCK-ON NITROGEN IN SI BY PHOSPHORUS IMPLANTATION THROUGH SI3N4 FILMS [J].

HIRAO, T ;

INOUE, K ;

TAKAYANAGI, S ;

YAEGASHI, Y .

APPLIED PHYSICS LETTERS, 1977, 31 (08) :505-508

[76]

HIRAO T, 1975, IMPLANTATION SEMICON, P599

[77]

HIRAO T, 1977, ION IMPLANTATION SEM, P1

[78] ELECTRONIC APERTURE FOR IN-DEPTH ANALYSIS OF SOLIDS WITH AN ION MICROPROBE [J].

HOFER, WO ;

LIEBL, H ;

ROOS, G ;

STAUDENMAIER, G .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1976, 19 (03) :327-334

[79] DEPTH-PROFILING OF CU-NI SANDWICH SAMPLES BY SECONDARY ION MASS-SPECTROMETRY [J].

HOFER, WO ;

LIEBL, H .

APPLIED PHYSICS, 1975, 8 (04) :359-360

[80] INFLUENCE OF REACTIVE GASES ON SPUTTERING AND SECONDARY ION EMISSION - OXIDATION OF TITANIUM AND VANADIUM DURING ENERGETIC PARTICLE IRRADIATION [J].

HOFER, WO ;

MARTIN, PJ .

APPLIED PHYSICS, 1978, 16 (03) :271-278

← 3 4 5 6 7 8 9 10 11 12 →