DIRECT DETERMINATION OF IMPACT IONIZATION QUANTUM YIELD IN SI BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：24

作者：

BAUER, A

LUDEKE, R

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.72.928

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ballistic-electron-emission spectroscopy on Si(111)-(7 x 7) patches in pinholes of thin NiSi2 films on n-type Si(111) reveals collector currents as high as 210% of the tunneling current at a tip bias of 10 V. This electron multiplication is assigned to impact ionization in Si. Its quantum yield up to 7 eV kinetic energy is extracted from the spectra and compared to recent theoretical results.

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页码：928 / 931

页数：4

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