THERMAL-BEHAVIOR OF FLUORINE IN SIO2 AND SI INVESTIGATED BY THE F-19(P,ALPHA-GAMMA) O-16 REACTION AND SECONDARY-ION MASS-SPECTROMETRY

被引：14

作者：

YU, BG ^{[1
]}

KONUMA, N ^{[1
]}

ARAI, E ^{[1
]}

OHJI, Y ^{[1
]}

NISHIOKA, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,TOKYO 152,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.349392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal changes of implanted fluorine distributions in a SiO2 film and a (100)-oriented Si single crystal were investigated by the F-19(p, alpha-gamma) O-16 reaction and secondary-ion mass spectrometry. Fluorine in the Si accumulates to a damaged region (consistent with a Monte Carlo simulation) after annealing above 700-degrees-C for 30 min. This effect is not observed in the SiO2. Once the fluorine is trapped by the damaged region, nearly 80% of the fluorine stays in the silicon after annealing at 800-degrees-C. In contrast, only 10% of implanted fluorine remains in the SiO2 after annealing at 800-degrees-C. These effects are explained by assuming the difference in the natures of imperfections in these samples. Above 1000-degrees-C, most of the fluorine diffuses out of both systems.

引用

收藏

页码：2408 / 2412

页数：5

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