ELECTRON TRAPS IN INGAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：17

作者：

KIM, HS

HAFICH, MJ

PATRIZI, GA

NANDA, A

VOGT, TJ

WOODS, LM

ROBINSON, GY

机构：

[1] GYEONGSANG NATL UNIV,DEPT PHYS,CHINJU,SOUTH KOREA

[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.355330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24+/-0.03 eV and the capture barrier energy was 0.06+/-0.02 eV. The trap concentration was less than 3 X 10(14) cm-3 and was found to be independent of Si doping for concentrations up to 4 X 10(18) cm-3 and to oxygen contamination in the range (0.5-1.5) X 10(18) cm-3.

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页码：1431 / 1433

页数：3

相关论文

共 12 条

[1] GALNP GROWN BY MOLECULAR-BEAM EPITAXY DOPED WITH BE AND SN [J].

BLOOD, P ;

ROBERTS, JS ;

STAGG, JP .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3145-3149

[2]

HAFICH MJ, 1992, J CRYST GROWTH, V127, P995

[3] OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71) [J].

KITAHARA, K ;

HOSHINO, M ;

OZEKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L110-L112

[4] BAND LINEUP FOR A GAINP/GAAS HETEROJUNCTION MEASURED BY A HIGH-GAIN NPN HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, T ;

TAIRA, K ;

NAKAMURA, F ;

KAWAI, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4898-4902

[5] MAIN ELECTRON TRAPS IN IN1-XGAXP (0.12 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.96) [J].

MATSUMOTO, T ;

KATO, T ;

TAKIGUCHI, M ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03) :410-417

[6]

MONDRY MJ, 1985, IEEE ELECTRON DEVICE, V6, P172

[7] MEASUREMENT OF SCHOTTKY-BARRIER ENERGY ON INGAP AND INGAALP FILMS LATTICE MATCHED TO GAAS [J].

NANDA, A ;

HAFICH, MJ ;

VOGT, TJ ;

WOODS, LM ;

PATRIZI, GA ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1992, 61 (01) :81-83

[8] DEEP ELECTRON TRAPPING CENTER IN SI-DOPED INGAAIP GROWN BY MOLECULAR-BEAM EPITAXY [J].

NOJIMA, S ;

TANAKA, H ;

ASAHI, H .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3489-3494

[9] ALUMINUM FREE INGAAS/GAAS/INGAASP/INGAP GRINSCH SL-SQW LASERS AT 0.98-MU-M [J].

OHKUBO, M ;

IJICHI, T ;

IKETANI, A ;

KIKUTA, T .

ELECTRONICS LETTERS, 1992, 28 (12) :1149-1150

[10] EFFECT OF DOPING ON ELECTRON TRAPS IN METALORGANIC MOLECULAR-BEAM EPITAXIAL GAXIN1-XP/GAAS HETEROSTRUCTURES [J].

PALOURA, EC ;

GINOUDI, A ;

KIRIAKIDIS, G ;

CHRISTOU, A .

APPLIED PHYSICS LETTERS, 1991, 59 (24) :3127-3129