ENSEMBLE MONTE-CARLO SIMULATION OF A 0.35-MU-M PSEUDOMORPHIC HEMT

被引：8

作者：

PARK, DH ^{[1
]}

WANG, Y ^{[1
]}

BRENNAN, KF ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30306

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：107 / 110

页数：4

共 22 条

[1] THEORY OF THE VELOCITY-FIELD RELATION IN ALGAAS [J].

BRENNAN, KF ;

PARK, DH ;

HESS, K ;

LITTLEJOHN, MA .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :5004-5008

[2] THEORY OF THE TEMPORAL RESPONSE OF A SIMPLE MULTIQUANTUM-WELL AVALANCHE PHOTODIODE [J].

BRENNAN, KF ;

WANG, Y ;

TEICH, MC ;

SALEH, BEA ;

KHORSANDI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1456-1467

[3]

BRENNAN KF, 1989, J APPL PHYS, V65

[4]

BRENNAN KF, 1984, THESIS U ILLINOIS

[5] QUANTUM-WELL PARA-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS WITH VERY HIGH TRANSCONDUCTANCE [J].

DANIELS, RR ;

RUDEN, PP ;

SHUR, M ;

GRIDER, D ;

NOHAVA, TE ;

ARCH, DK .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :355-357

[6] HIGH-PERFORMANCE INALAS/INGAAS HEMTS AND MESFETS [J].

FATHIMULLA, A ;

ABRAHAMS, J ;

LOUGHRAN, T ;

HIER, H .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :328-330

[7]

HONG WP, 1987, IEEE T ELECTRON DEV, V34, P1491, DOI 10.1109/T-ED.1987.23110

[8] HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KETTERSON, A ;

MOLONEY, M ;

MASSELINK, WT ;

PENG, CK ;

KLEM, J ;

FISCHER, R ;

KOPP, W ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :628-630

[9] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KETTERSON, AA ;

MASSELINK, WT ;

GEDYMIN, JS ;

KLEM, J ;

PENG, CK ;

KOPP, WF ;

MORKOC, H ;

GLEASON, KR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :564-571

[10] GA0.4IN0.6AS/AL0.55IN0.45AS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KUO, JM ;

CHANG, TY .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :380-382

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