SUBSTRATE MISORIENTATION EFFECT ON BE TRANSPORT DURING MBE GROWTH OF GAAS

被引：9

作者：

MOCHIZUKI, K

GOTO, S

KAKIBAYASHI, H

KUSANO, C

机构：

[1] Central Research Laboratory, Hitachi Ltd.

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 07期

关键词：

Atomic step; Beryllium; Diffusion; Disordering; Gallium arsenide; Molecular beam epitaxy; Substrate misorientation; Superlattice; Surface segregation;

D O I：

10.1143/JJAP.29.1235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Be transport during MBE growth of GaAs has been studied. The Be surface segregation was clearly separated from the Be diffusion by using misoriented as well as nominal (100) substrates. The Be profiles measured by SIMS showed that the surface segregation was suppressed by the substrate misorientation even when the anomalous diffusion took place. The CAT observation revealed that the Be-induced disordering of superlattices occurred for 6×1019 cm-3 doping. The width of the disordered region was found to depend on the substrate misorientation, which was due to the misorientation dependence of the surface segregation. The step exchange model has been successfully employed to account for these results. © 1990 The Japan Society of Applied Physics.

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页码：1235 / 1239

页数：5

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