COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES

Fowler-Nordheim tunneling injections were performed, from the gate, or from the substrate, in P-type metal oxide semiconductor capacitors with polysilicon gates in both wet and dry oxides. When the injection was from the gate, trapped holes, as well as negative and anomalous positive charges were created and it was possible to determine their amplitude and their centroid. When the injection was from the substrate, only negative and anomalous positive charges were created, but the determination of the centroids was not always possible since the positive charge appears to be located at both interfaces.