THE EFFECT OF CIRCUIT TOPOLOGY ON RADIATION-INDUCED LATCHUP

被引：9

作者：

JOHNSTON, AH

PLAAG, RE

BAZE, MP

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2229 / 2238

页数：10

共 18 条

[1] TESTING CONSIDERATIONS FOR RADIATION-INDUCED LATCHUP [J].

BAZE, MP ;

JOHNSTON, AH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1730-1735

[2] LATCHUP PATHS IN BIPOLAR INTEGRATED-CIRCUITS [J].

BAZE, MP ;

JOHNSTON, AH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1499-1504

[3] INFRARED MICROSCOPY STUDY OF ANOMALOUS LATCHUP CHARACTERISTICS DUE TO CURRENT REDISTRIBUTION IN DIFFERENT PARASITIC PATHS [J].

CANALI, C ;

CORSI, F ;

MUSCHITIELLO, M ;

ZANONI, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) :969-978

[4] SEEING THROUGH THE LATCH-UP WINDOW [J].

COPPAGE, FN ;

ALLEN, DJ ;

DRESSENDORFER, PV ;

OCHOA, A ;

RAUCHFUSS, J ;

WROBEL, TF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4122-4126

[5]

DICKEY RH, 1974, NBS40010 PUBL

[6]

ESTREICH DB, 1980, G2019 STANF U STANF

[7] LATCHUP MODEL FOR THE PARASITIC P-N-P-N PATH IN BULK CMOS [J].

FANG, RCY ;

MOLL, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :113-120

[8]

HEINBCH DV, 1988, CMOS3 CELL LIBRARY

[9]

JOHNSTON AH, 1985, IEEE T NUCL SCI, V32, P4018

[10] LATCHUP PERFORMANCE OF RETROGRADE AND CONVENTIONAL N-WELL CMOS TECHNOLOGIES [J].

LEWIS, AG ;

MARTIN, RA ;

HUANG, TY ;

CHEN, JY ;

KOYANAGI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) :2156-2164

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