MASK-SIZE DEPENDENCE OF LATTICE-DEFECTS GENERATED BY B-IMPLANTATION AND AS-IMPLANTATION INTO SUB-MICRON SI AREAS

被引：12

作者：

TAMURA, M

HORIUCHI, M

KAWAMOTO, Y

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90197-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：329 / 335

页数：7

共 9 条

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APPLIED PHYSICS LETTERS, 1988, 52 (15) :1210-1212

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[8] HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON [J].

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[9] DIRECT EVIDENCE OF ARSENIC CLUSTERING IN HIGH-DOSE ARSENIC-IMPLANTED SILICON [J].

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