GATE-EDGE EFFECTS ON SPE REGROWTH FROM AS+-IMPLANTED SI

被引：12

作者：

HORIUCHI, M

TAMURA, M

AOKI, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90187-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：285 / 289

页数：5

共 8 条

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[5] SOLID-II - HIGH-VOLTAGE HIGH-GAIN KILO-ANGSTROM-CHANNEL-LENGTH CMOSFETS USING SILICIDE WITH SELF-ALIGNED ULTRASHALLOW (3S) JUNCTION [J].

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[6] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J].

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[7]

TAMURA M, 1988, J APPL PHYS LETT, V52, P1210

[8]

TAMURA M, 1972, JPN J APPL PHYS, V8, P1097

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