SYSTEMATIC STUDY ON SI AND SE DOPING OF MOVPE GAAS

被引：11

作者：

SAKAGUCHI, H

SUZUKI, R

MEGURO, T

机构：

[1] Hitachi Cable Ltd, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90590-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

11

引用

收藏

页码：602 / 606

页数：5

相关论文

共 11 条

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