共 8 条
FABRICATION-RELATED EFFECTS IN METAL-ZNO-SIO2-SI STRUCTURES
被引:7
作者:

CORNELL, ME
论文数: 0 引用数: 0
h-index: 0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907 PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

ELLIOTT, JK
论文数: 0 引用数: 0
h-index: 0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907 PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

GUNSHOR, RL
论文数: 0 引用数: 0
h-index: 0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907 PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

PIERRET, RF
论文数: 0 引用数: 0
h-index: 0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907 PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
机构:
[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
关键词:
D O I:
10.1063/1.89806
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
引用
收藏
页码:560 / 562
页数:3
相关论文
共 8 条
- [1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +AUBUCHON, KG论文数: 0 引用数: 0 h-index: 0
- [2] EFFECT OF BIAS FIELD IN A ZINC-OXIDE-ON-SILICON ACOUSTIC CONVOLVER[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 473 - 475COLDREN, LA论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,HOLMDEL,NJ 07733 BELL TEL LABS INC,HOLMDEL,NJ 07733
- [3] PROPERTIES OF MZOS SURFACE-WAVE CONVOLVER CONFIGURATION[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 554 - 559DAVIS, KL论文数: 0 引用数: 0 h-index: 0机构: USN,RES INST,WASHINGTON,DC 20375 USN,RES INST,WASHINGTON,DC 20375
- [4] ZINC OXIDE SILICON MONOLITHIC ACOUSTIC SURFACE-WAVE OPTICAL IMAGE SCANNER[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 179 - 182ELLIOTT, JK论文数: 0 引用数: 0 h-index: 0机构: PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907GUNSHOR, RL论文数: 0 引用数: 0 h-index: 0机构: PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907PIERRET, RF论文数: 0 引用数: 0 h-index: 0机构: PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907DAVIS, KL论文数: 0 引用数: 0 h-index: 0机构: PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
- [5] OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 377 - 379HUGHES, GW论文数: 0 引用数: 0 h-index: 0机构: RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540 RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540POWELL, RJ论文数: 0 引用数: 0 h-index: 0机构: RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540 RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540WOODS, MH论文数: 0 引用数: 0 h-index: 0机构: RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540 RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
- [6] RADIATION AND OXIDE-METAL INTERACTION IN MOS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 91 - +LINDMAYER, J论文数: 0 引用数: 0 h-index: 0
- [7] DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1236 - 1241MCCAUGHAN, DV论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA BELL TEL LABS INC, MURRAY HILL, NJ 07974 USAKUSHNER, RA论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
- [8] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1463 - +MONTILLO, F论文数: 0 引用数: 0 h-index: 0BALK, P论文数: 0 引用数: 0 h-index: 0